"Samsung plans to launch mass production of the 80nm process, 2Gb DDR2 SDRAM in the second half of 2005. The 2Gb DDR2 devices meet fine-pitch ball grid array (FBGA) package specifications for DDR2. Even without modifications, the devices can directly drive module density levels of Gigabyte (GB) scale; 2GB, 4GB and 8GB." - Anandtech

Samsung has demonstrated the industry's first 2-Gigabit DDR2 SDRAM. This utilises the 80-nanometer (nm) process technology, and overcomes the industry expectations that 2Gb DRAM manufacture would require sub 65nm circuitry. The memory chips offer RCAT (recess channel array transistor), which is a technology unique to Samsung that reduces transistor area space by implementing a 3-D structural design, increasing the integration level for higher density on a given area. There are also innovations in 3-D transistor technology and general architecture. More here.