Continued miniaturization of the overall memory circuit and an increasingly limited area of coverage within a wafer cell make it much harder to secure and sustain sufficient volumes of electrons. Adding to the 50nm design improvements, the SEG transistor introduces a multi-layered dielectric layer (ZrO2/Al2O3/ZrO2) to resolve weak electrical features. In addition, the new dielectric layer sustains higher volumes of electron to increase storage capacity, ensuring higher reliability in storing data, the company indicated.
This would be a great boon to laptops, where getting more than 2GB of ram can often be problematic or very expensive. With the increasing demand for larger amounts of RAM in a desktop, it'll make it cheaper to be able to fill those demands as well.