Samsung announces First 2-Gigabit DDR2 SDRAM

By Phantasm66
Sep 21, 2004
  1. "Samsung plans to launch mass production of the 80nm process, 2Gb DDR2 SDRAM in the second half of 2005. The 2Gb DDR2 devices meet fine-pitch ball grid array (FBGA) package specifications for DDR2. Even without modifications, the devices can directly drive module density levels of Gigabyte (GB) scale; 2GB, 4GB and 8GB." - Anandtech

    Samsung has demonstrated the industry's first 2-Gigabit DDR2 SDRAM. This utilises the 80-nanometer (nm) process technology, and overcomes the industry expectations that 2Gb DRAM manufacture would require sub 65nm circuitry. The memory chips offer RCAT (recess channel array transistor), which is a technology unique to Samsung that reduces transistor area space by implementing a 3-D structural design, increasing the integration level for higher density on a given area. There are also innovations in 3-D transistor technology and general architecture. More here.
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