Samsung has demonstrated the industry's first 2-Gigabit DDR2 SDRAM. This utilises the 80-nanometer (nm) process technology, and overcomes the industry expectations that 2Gb DRAM manufacture would require sub 65nm circuitry. The memory chips offer RCAT (recess channel array transistor), which is a technology unique to Samsung that reduces transistor area space by implementing a 3-D structural design, increasing the integration level for higher density on a given area. There are also innovations in 3-D transistor technology and general architecture. More here.
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