Micron, in partnership with Intel today announced a new high speed NAND Flash memory technology that can greatly increase the transfer rate for devices that use the silicon based storage. The companies claim the technology is five times faster than conventional NAND and can reach speeds of 200MB/s for reading data and 100MB/s for writing data.

The speed improvements resulted from using the ONFI 2.0 (Open NAND Flash Interface) specification combined with a four-plane architecture and higher clock speeds. Watch for the speedy Micron flash to pop in cellphones, camcorders, hybrid hard drives, and other portable consumer electronic devices sometime in the second half of 2008 – you can expect to pay a premium for that performance though.