As the flash memory market in general continues to demand higher capacity within smaller and thinner memory products, electronics giant Samsung is showing off what it claims is the world’s first 64-gigabit NAND flash memory chip based on finer process technology using circuit elements that are 30 nanometers wide.

According to the company, the new flash device was successfully developed through the use of a new manufacturing process called self-aligned double patterning technology (SaDPT), which involves a more efficient pattern transfer than the one used in its older charge trap flash (CTF) procedure. The chips are planned to begin mass production sometime in 2009, paving the way for companies to produce memory cards (such as SD or CF-II) with up to 128GB of storage and 1.8” solid state disks capable of storing a whopping 512GB of data.