Samsung is preparing to unleash its first solid-state drive that makes use of its toggle-mode DDR NAND flash memory. Aimed at the premium notebook segment, the new entrant parades both high speed and capacity. The 512GB drive is rated for a maximum read speed of 250MB/s, while sequential writes max out at 220MB/s quick enough to store two DVDs in just a minute.
Internally, the drive is comprised of 30nm 32Gb chips that can run at 3.3V or 1.8V, and it features a new low-power controller designed specifically for toggle-mode NAND. Samsung says the controller analyzes frequency of use along with user preferences to activate a low-power mode, which could give notebooks an extra hour of battery life or more.
Additionally, the drive makes use of 256-bit AES encryption so you can lockdown your data with peace of mind. Volume production is planned to kick off next month, but there's no information regarding a retail launch date or price presumably because the drive will mostly ship to system builders.