Samsung Electronics today announced it has begun production of a high-performance toggle DDR 2.0 multi-level-cell (MLC) memory chip. The 64-gigabit MLC NAND flash chip is manufactured with 20nm-class process technology and can transmit data at a bandwidth of up to 400Mb/s (50MB/s). This provides a 10-fold increase over the 40Mb/s (5MB/s) SDR NAND widely used today, and a three-fold boost over 133Mb/s (16.6MB/s) toggle DDR 1.0, 32Gb NAND flash.
"With this Samsung is leading the market, which is evolving to fourth-generation smartphones and Serial ATA 6Gb/s SSDs," said executive VP of memory sales & marketing Wanhoon Hong. "We will continue to aggressively develop the world's most advanced toggle DDR NAND flash solutions with higher performance and density, since we see them as vital to enabling a greater diversity of services for mobile phone users worldwide."
The Korean company expects the availability of storage density as high as eight gigabytes (64Gb) in a single chip will trigger widespread acceptance of Toggle DDR-based high-performance flash in USB flash drives and SD cards, as well as smart phones and SSDs, replacing previous four gigabyte (32Gb) chips that Samsung started producing last year.
Back in April, SanDisk and Toshiba announced the world's first NAND flash memory chips manufactured using a 19nm process technology, which also use Toggle DDR2.0 to enhance data transfer speed. High-volume production planned for the second half of 2011, though, while Intel and Micron also have a 20nm 8GB (64Gb) part planned for production in that timeframe. According to IHS iSuppli, shipments of NAND flash memory with 64Gb or higher density are expected to account for approximately 70% of total NAND flash memory shipments in 2012.
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