AMD is planning to premier a number of technological achievements at this year's International Electron Devices Meeting, which began in San Francisco yesterday.
In the first of three major presentations, AMD will advocate a possible future alternative to the present "planar" transistors called Fin Field Effect Transistors.
In the second, it will outline what research work the company has done into building transistors which are made not from polysilicon but from metal. This new nickel-based gate technology could drastically improve the performance of transistors by improving electrical current flow. AMD believes that transistors of this type could be the new industry standard by 2005.
And in the third, AMD will discuss its work with Stanford University with new Flash memory cell structures.
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