In a nutshell: Samsung at its annual Memory Tech Day event showcased a pair of innovative memory products including its next-generation HBM3E (High Bandwidth Memory 3 Extended) DRAM, dubbed Shinebolt. Samsung may be a little late to the game considering rivals SK Hynix and Micron have already released their HMB3E products to partners, but makes up for the delay with improved performance.
As Hot Hardware highlights, SK Hynix's offering can hit 8Gbps per pin, and Micron's offering can reach up to 9.2Gbps per pin. Samsung said Shinebolt boasts an impressive 9.8 gigabits per second per pin speed, allowing it to reach transfer rates exceeding more than 1.2 terabytes per second (TBps).
Samsung said it optimized its non-conductive film (NCF) tech to eliminate gaps between chip layers, which also boosted thermal conductivity for improved heat characteristics.
Shinebolt has already entered mass production and samples are now shipping to customers, we're told. Look for the first batch of products to help speed up AI-model training in data centers.
Samsung also introduced its GDDR7 product, and is billed as the industry's first 32Gbps example. It'll serve as the successor to GDDR6, which first launched on Nvidia GeForce 20 series cards back in 2018. GDDR6X sped things up a bit starting with the RTX 30 Series but even still, it is more than three years old at this point and is due for an upgrade.
Back in July, Samsung said GDDR7 will be 20 percent more energy efficient than GDDR6 and will come with a low operating voltage option for applications that are mindful of power usage. The tech titan also revealed that GDDR7 will enable up to 1.5TBps of bandwidth thanks in part to the use of the Pulse Amplitude Modulation (PAM3) signaling instead of the older Non Return to Zero (NRZ) method.
Yongcheol Bae, executive VP of the memory product planning team at Samsung, said GDDR7 will be brought to market in line with industry demand, adding that they plan to continue leading in the space.