Samsung on Tuesday announced that it has begun mass production of 4GB DRAM packages based on the second generation High Bandwidth Memory (HBM2) interface using its 20-nanometer manufacturing process.

The South Korean technology giant says its 4GB HBM2 package is created by stacking four 8-gigabit (Gb) core dies on top of a buffer die which are vertically interconnected using the through silicon via (TSV) interconnect technique.

As you'd expect, the new DRAM package is no slouch in the performance department. Samsung says the package offers 256GBps of bandwidth - double what's possible with HBM1 and a more than seven-fold increase over the 36GBps bandwidth of a 4Gb GDDR5 DRAM chip. It also enables enhanced power efficiency by doubling the bandwidth per watt over a 4Gb GDDR5-based solution and has error-correcting code (ECC) support built in, making it ideal for enterprise use.

Samsung said it also plans to produce an 8GB HBM2 DRAM package by the end of the year, allowing graphics card makers to save as much as 95 percent of space versus using GDDR5 DRAM. More performance and greater efficiency is always a good thing.

It'll still be a while before these chips find their way to graphics cards you can buy but that's alright. Starting production early means supply constraints are less likely, something that first generation HBM has suffered from.