Was reading the Samsung EUV article and found myself wondering:
3 nm! ? I remember some science papers published a while back on quantum tunneling at 5 nm? This Wiki Link talks about 1-3nm.
"...Tunnelling occurs with barriers of thickness around 1–3 nm and smaller,[18] but is the cause of some important macroscopic physical phenomena. For instance, tunnelling is a source of current leakage in very-large-scale integration (VLSI) electronics and results in the substantial power drain and heating effects that plague high-speed and mobile technology; it is considered the lower limit on how small computer chips can be made.[19] Tunnelling is a fundamental technique used to program the floating gates of flash memory, which is one of the most significant inventions that have shaped consumer electronics in the last two decades. ..."
T.O.M.A. here because I don't remotely have the physics background reading on this. I'm wonder if dual layer grounded faraday shielding is required on these chips to stop random magnetics (especially including 5G) affecting the circuit walls and thus the data?
If so, would this faraday shielding require true ground circuitry in the system and the wall sockets. I remember some advertising on "The Brick" decades ago concerning lightning backscatter through house grounds that could blow out computer systems unless the grounding line was blocked. Can't remember if it was chokes, FET, or what. So the question would concern whether enough voltage change from external RF in the circuitry occurs to cause effects in a 3nm circuit and will it be affected or ameliorated by one or two levels of copper (faraday shield) and how 'grounded' does that copper have to be. If it does then this 'lower limit' ciircuitry level may be limited to custom designed and built server farms.
Anyone know any readings on this?
3 nm! ? I remember some science papers published a while back on quantum tunneling at 5 nm? This Wiki Link talks about 1-3nm.
"...Tunnelling occurs with barriers of thickness around 1–3 nm and smaller,[18] but is the cause of some important macroscopic physical phenomena. For instance, tunnelling is a source of current leakage in very-large-scale integration (VLSI) electronics and results in the substantial power drain and heating effects that plague high-speed and mobile technology; it is considered the lower limit on how small computer chips can be made.[19] Tunnelling is a fundamental technique used to program the floating gates of flash memory, which is one of the most significant inventions that have shaped consumer electronics in the last two decades. ..."
T.O.M.A. here because I don't remotely have the physics background reading on this. I'm wonder if dual layer grounded faraday shielding is required on these chips to stop random magnetics (especially including 5G) affecting the circuit walls and thus the data?
If so, would this faraday shielding require true ground circuitry in the system and the wall sockets. I remember some advertising on "The Brick" decades ago concerning lightning backscatter through house grounds that could blow out computer systems unless the grounding line was blocked. Can't remember if it was chokes, FET, or what. So the question would concern whether enough voltage change from external RF in the circuitry occurs to cause effects in a 3nm circuit and will it be affected or ameliorated by one or two levels of copper (faraday shield) and how 'grounded' does that copper have to be. If it does then this 'lower limit' ciircuitry level may be limited to custom designed and built server farms.
Anyone know any readings on this?