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Toshiba announces 24nm toggle-mode DDR NAND flash

Toshiba has introduced new flash memory chips that offer more performance and storage capacity in less space than existing parts. The company's new 24nm e-MMC chips feature toggle-mode double data rate (DDR) NAND flash memory, which boosts random access and…

Samsung announces 20nm DDR 2.0 NAND chip production

Samsung Electronics today announced it has begun production of a high-performance toggle DDR 2.0 multi-level-cell (MLC) memory chip. The 64-gigabit MLC NAND flash chip is manufactured with 20nm-class process technology and can transmit data at a bandwidth of up to…

Toshiba unveils SmartNAND memory with embedded ECC

Toshiba has introduced a new family of NAND Flash memory products based on a 24nm manufacturing process that integrates a control chip with error correction code (ECC). Dubbed SmartNAND, they will come in five capacity points, going from 4GB up…

Toshiba starts mass production of 24nm NAND flash chips

Toshiba has announced it has begun mass production of NAND flash memory chips using a 24-nanometer manufacturing process. The latest technology advance is being applied to 2-bit-per-cell (MLC) 64Gb (8GB) chips, which are claimed to be the world's smallest and…

Samsung, Toshiba team up to boost NAND flash speeds

Samsung and Toshiba have announced plans to push for a new NAND flash memory specification meant to significantly speed up transfer rates. Specifically, the two companies committed themselves to develop toggle-mode DDR 2.0 NAND flash memory with a 400Mb/s interface,…