Performance articles

sram taiwan performance research memory tsmc mram magnetic

After years in the lab, SOT-MRAM might finally be ready for the real world

A tungsten breakthrough could finally make next-gen memory a reality
Why it matters: A team of researchers spanning Taiwan and the United States have combined materials science, device engineering, and process compatibility to address one of the most stubborn challenges in magnetic memory development. With the β-phase tungsten puzzle solved, the research presents a credible path toward mass-produced SOT-MRAM – a technology that until now had remained just beyond reach.